PHI ADEPT-1010™ Dynamic SIMS
Product Overview
The PHI ADEPT-1010™ is an advanced Dynamic Secondary Ion Mass Spectrometry (D-SIMS) instrument designed for high-sensitivity depth profiling of materials. It excels in analyzing shallow implanted dopants in semiconductors, thin films, and multilayer structures. With its high-density, low-energy ion beam generated by a floating column, the ADEPT-1010™ enables rapid and precise analysis of ultra-shallow regions, making it an essential tool for both research and manufacturing environments.
Key Features
- High-Density Low-Energy Ion Beam: Utilizes a floating column to produce a high-density ion beam at low energies, enhancing sensitivity for shallow depth profiling.
- Ultra-High Vacuum System: Equipped with a large-capacity turbomolecular pump, the system achieves ultra-high vacuum conditions, reducing background noise and improving detection limits for atmospheric components.
- Automated Analysis with User-Friendly Interface: Features a simple graphical user interface (GUI) that allows for quick setup of automatic routine analyses, facilitating multi-point measurements with ease.
- Advanced Ion Optics Design: The redesigned ion optics system maintains effective sputtering beam currents even at primary ion energies as low as 250 eV, ensuring high depth resolution.
Specifications
| Specification | Details |
|---|---|
| Primary Ion Source | Oxygen ion beam |
| Ion Energy | 500 eV (capable of operating as low as 250 eV) |
| Mass Analyzer | Quadrupole mass analyzer |
| Depth Resolution | Approximately 1 nm |
| Vacuum System | Ultra-high vacuum achieved with large-capacity turbomolecular pump |
| Software Interface | Simple GUI for automated routine analysis and multi-point measurements |
| Sample Stage | High-precision, fully automated 5-axis sample manipulator |
| Detection Limits | Capable of detecting low levels of elements such as H, C, and O in materials |
Applications
- Semiconductor Industry: Ideal for analyzing shallow implanted dopants, monitoring ultra-shallow junctions, and evaluating thin film compositions in semiconductor devices.
- Materials Science: Suitable for depth profiling of multilayer films and thin coatings, providing insights into material interfaces and composition gradients.
- Surface Contamination Analysis: Detects and profiles low-level contaminants such as oxygen and carbon in materials like SiGe layers, crucial for ensuring material purity.
- Research and Development: Supports advanced research applications requiring precise depth profiling and elemental analysis at nanometer scales.
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