High-Resolution In-Line Optical Metrology
Product Overview
The FilmTek™ 4000 is non-contact metrology platform, engineered for precise thickness and optical property measurements in silicon photonics, integrated photonic circuits, and planar waveguide manufacturing. Utilizing proprietary multi-angle reflectometry and Differential Power Spectral Density (DPSD) analysis, the system delivers industry-leading refractive index resolution — up to 100× better than conventional optical techniques.
Designed for real-time in-line production control, FilmTek 4000 features automated wafer handling, high-throughput beam optimization, and robust integration capabilities, making it ideal for semiconductor fabs, optoelectronics manufacturers, and research labs working with complex multi-layer stacks.
Key Features
- Unmatched refractive index resolution: Delivers resolution up to 2×10⁻⁵ using Bruker’s DPSD technique
- True independent measurement of film thickness (t), refractive index (n), and extinction coefficient (k)
- Automated in-line wafer handling up to 300 mm with FOUP or cassette loading options
- Multi-angle reflectometry with patented dual-angle measurement (normal and 70° incidence)
- Spectral range from 400 nm to 1700 nm supports materials from visible to near-IR wavelengths
- Optional ellipsometry extension for ultrathin film analysis (<5 nm)
- Integrated pattern matching and beam alignment for high-accuracy positioning
- Fast processing time: <5 seconds per site for high-throughput monitoring
| Specification | Details |
|---|---|
| Measurement Functions | Film thickness (t), refractive index (n), extinction coefficient (k), roughness, crystallinity |
| Film Thickness Range | 0 Å to 150 µm |
| Film Thickness Accuracy | ±1.5 Å for NIST oxide standard (5000 Å – 1 µm) |
| Thickness Precision (1σ) | 2 Å / 0.00002 (for 5 µm oxide, t/n) |
| Spectral Range | 400 nm to 1700 nm |
| Spectral Resolution | 0.3 nm (visible), 2 nm (NIR) |
| Measurement Spot Size | 1 mm (normal); 2 mm (70°) |
| Light Source | Regulated halogen lamp, optional NIR source |
| Detectors | 2048-pixel Sony CCD (visible), 512-pixel cooled Hamamatsu InGaAs (NIR) |
| Wafer Handling | Brooks or Bruker systems (FOUP/cassette) |
| Stage Automation | 150 mm to 300 mm automated |
| Measurement Time | <5 seconds per site |
Applications
Silicon Photonics and Photonic ICs
- Refractive index and thickness monitoring of BPSG, Ge:SiO₂, P-SiO₂, Si₃N₄, SiON, LiNbO₃
- Characterization of cladding and core layers for waveguides
- Process monitoring of planar photonic structures
Advanced Research and Materials Science
- High-resolution analysis of novel materials and multi-layer stacks
- Supports materials from UV to NIR spectral range
- Integrated modeling with quantum-based dispersion formulas
Optoelectronics and MEMS
- Monitoring refractive index shifts due to temperature or process variation
- Thin-film crystallinity and roughness analysis
- Evaluation of silicon-based optical films for performance tuning
Semiconductor Manufacturing
- In-line control of dielectric layers and AR coatings
- Patterned wafer metrology with sub-nanometer repeatability
- Thickness and n/k separation across multilayer stacks
Resource
Please complete the form and we will be in contact as soon as possible.