Advanced Spectroscopic Ellipsometer

FilmTek 2000 PAR-SE – Advanced Multi-Angle Spectroscopic Ellipsometer

Product Overview

The FilmTek™ 2000 PAR-SE is a state-of-the-art spectroscopic ellipsometer designed for precise thin film and multi-layer analysis. Combining patented Multi-Angle Differential Polarimetry (MADP) and Differential Power Spectral Density (DPSD) technologies, it enables independent measurement of film thickness and refractive index, providing enhanced sensitivity, particularly for films within complex multi-layer stacks. This fully integrated system is equipped with advanced material modeling software, ensuring reliable and intuitive measurements, even on patterned wafers.

 

Key Features

  • Independent Measurement of Thickness and Refractive Index: Utilizes MADP and DPSD technologies for precise characterization of complex film stacks.
  • Broad Spectral Range: Covers wavelengths from 190 nm to 1700 nm, accommodating a wide variety of thin film materials. ​
  • High Precision for Ultra-Thin Films: Achieves 0.03 Å repeatability on native oxide measurements, ideal for ultra-thin film applications. 
  • Automated Stage with Autofocus: Facilitates efficient, user-friendly operation and supports wafers up to 300 mm. ​
  • Advanced Material Modeling Software: Incorporates Bruker's generalized material model with advanced global optimization algorithms for accurate data analysis. 
  • Optional Generalized Ellipsometry: Offers a 4×4 matrix generalization method for anisotropy measurements (nₓ, nᵧ, n𝓏).

 

Specifications

 

Specification Details
Film Thickness Range 0 Å to 150 µm
Film Thickness Accuracy ±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm
Spectral Range 190 nm - 1700 nm (220 nm - 1000 nm is standard)
Measurement Spot Size 25 µm - 300 µm (normal incidence); 2 mm (70°)
Sample Size 2 mm - 300 mm (150 mm standard)
Spectral Resolution 0.3 nm - 2 nm
Light Source Regulated deuterium-halogen lamp (2,000 hrs lifetime)
Detector Type 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Automated Stage with Auto Focus 300 mm (200 mm is standard)
Computer Multi-core processor with Windows™ 10 Operating System
Measurement Time <1 sec per site (e.g., oxide film)

 

Applications

  • Multi-layer Thin Films: Accurate production measurements of thin films and multi-layers on patterned device wafers for front and back-end manufacturing. Enables in-line composition control (e.g., %Ge in SiGex) and measurement of thin metal oxide thickness with sub-Angstrom repeatability.
  • Micro-Electro-Mechanical Systems (MEMS): Fully automated film thickness and refractive index measurements of various films on patterned device wafers, featuring cassette-to-cassette wafer handling and pattern recognition.
  • New Material Characterization: Rapid, accurate, and reliable R&D measurements for new materials, including determination of multiple layer thicknesses, indices of refraction, extinction coefficients, energy band gaps, composition, surface roughness, and crystallinity.
  • Semiconductor and Dielectric Materials: Precise measurement of thin films used in semiconductor devices, ensuring optimal performance and reliability. ​
  • LED/OLED Manufacturing: Evaluation of multilayer structures in LED/OLED production to enhance efficiency and color accuracy. ​
  • Multilayer Optical Coatings: Analysis of complex optical coatings to achieve desired reflectance and transmittance properties. ​
  • Optical Antireflection Coatings: Assessment of antireflection coatings to improve optical device performance by minimizing surface reflections. ​
  • Electro-Optical Materials: Characterization of materials used in electro-optical applications to ensure consistency and quality. ​
  • Solar Cells: Measurement of photovoltaic materials to enhance energy conversion efficiency in solar panels.
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