Advanced Spectroscopic Ellipsometer

Product Overview
The FilmTek™ 2000 PAR-SE is a state-of-the-art spectroscopic ellipsometer designed for precise thin film and multi-layer analysis. Combining patented Multi-Angle Differential Polarimetry (MADP) and Differential Power Spectral Density (DPSD) technologies, it enables independent measurement of film thickness and refractive index, providing enhanced sensitivity, particularly for films within complex multi-layer stacks. This fully integrated system is equipped with advanced material modeling software, ensuring reliable and intuitive measurements, even on patterned wafers.
Key Features
- Independent Measurement of Thickness and Refractive Index: Utilizes MADP and DPSD technologies for precise characterization of complex film stacks.
- Broad Spectral Range: Covers wavelengths from 190 nm to 1700 nm, accommodating a wide variety of thin film materials.
- High Precision for Ultra-Thin Films: Achieves 0.03 Å repeatability on native oxide measurements, ideal for ultra-thin film applications.
- Automated Stage with Autofocus: Facilitates efficient, user-friendly operation and supports wafers up to 300 mm.
- Advanced Material Modeling Software: Incorporates Bruker's generalized material model with advanced global optimization algorithms for accurate data analysis.
- Optional Generalized Ellipsometry: Offers a 4×4 matrix generalization method for anisotropy measurements (nₓ, nᵧ, n𝓏).
Specifications
| Specification | Details |
|---|---|
| Film Thickness Range | 0 Å to 150 µm |
| Film Thickness Accuracy | ±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm |
| Spectral Range | 190 nm - 1700 nm (220 nm - 1000 nm is standard) |
| Measurement Spot Size | 25 µm - 300 µm (normal incidence); 2 mm (70°) |
| Sample Size | 2 mm - 300 mm (150 mm standard) |
| Spectral Resolution | 0.3 nm - 2 nm |
| Light Source | Regulated deuterium-halogen lamp (2,000 hrs lifetime) |
| Detector Type | 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR) |
| Automated Stage with Auto Focus | 300 mm (200 mm is standard) |
| Computer | Multi-core processor with Windows™ 10 Operating System |
| Measurement Time | <1 sec per site (e.g., oxide film) |
Applications
- Multi-layer Thin Films: Accurate production measurements of thin films and multi-layers on patterned device wafers for front and back-end manufacturing. Enables in-line composition control (e.g., %Ge in SiGex) and measurement of thin metal oxide thickness with sub-Angstrom repeatability.
- Micro-Electro-Mechanical Systems (MEMS): Fully automated film thickness and refractive index measurements of various films on patterned device wafers, featuring cassette-to-cassette wafer handling and pattern recognition.
- New Material Characterization: Rapid, accurate, and reliable R&D measurements for new materials, including determination of multiple layer thicknesses, indices of refraction, extinction coefficients, energy band gaps, composition, surface roughness, and crystallinity.
- Semiconductor and Dielectric Materials: Precise measurement of thin films used in semiconductor devices, ensuring optimal performance and reliability.
- LED/OLED Manufacturing: Evaluation of multilayer structures in LED/OLED production to enhance efficiency and color accuracy.
- Multilayer Optical Coatings: Analysis of complex optical coatings to achieve desired reflectance and transmittance properties.
- Optical Antireflection Coatings: Assessment of antireflection coatings to improve optical device performance by minimizing surface reflections.
- Electro-Optical Materials: Characterization of materials used in electro-optical applications to ensure consistency and quality.
- Solar Cells: Measurement of photovoltaic materials to enhance energy conversion efficiency in solar panels.
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